Features & Specifications :P-channel MOSFETDynamic dv/dt ratingLow threshold voltageHigh-speed switchingLow turn-on resistanceRepetitive avalanche ratedSimple drive requirementEase of parallelingDrain-to-source voltage VDS: -100 VMaximum Continuous drain current ID: -19 AMaximum Pulse drain current: -72 AMaximum Power dissipation PD: 150 WGate-to-source voltage VGS: ±20 VPeak diode recovery dv/dt: -5.5 V/nsTotal gate charge QG: 61 nCOn-state resistance RDS: 0.20 ΩOperating temperature range: -55 to 175 ˚CTransistor Polarity: P-channelPackage: TO-220IRF9540 Equivalent ComponentsIRF9540PBF, IRF9540PbF-BE3, IRF034, IRF044, 2SJ380, 2SJ412, SIHF9540Switching CharacteristicsTurn-on delay time Td(on) = 16 nsecRise time Tr = 73 nsecFall time Tf = 57 nsecTurn-off delay time Td(off) = 34 nsecSimulation of IRF9540 P-channel MOSFETIRF9540 is a P-channel MOSFET. Here, we will simulate IRF9540 available in proteus. The MOSFET is a power electronics switch that will turn ON when the proper voltage is applied to the gate terminal. IRF9540 is a P-channel MOSFET. Hence, we need to apply a proper negative voltage to turn ON MOSFET.We use a 1K potentiometer to change the value of the applied voltage. DC voltmeter shows a reading of applied gate voltage. Once, the gate voltage is more than the threshold voltage between drain and source, the MOSFET will turn ON. And the current will pass through the circuit.A battery and LED are connected in the path of drain-to-source. When the MOSFET is turned ON, the LED will glow.ApplicationsHigh power transistor driver applicationSwitching regulatorUPS (Uninterrupted Power Supply)Battery management system and battery chargerMotor driver applications SKU: EAP-001274 Categories: Component, Electronic Parts, Transistor Tags: IRF9540N, MOSFET, P-Channel
