Description of IRF540 N Channel Enhancement MOSFET These are N - Channel 100V - 00.50Ω - 30A - TO-220/TO-220FI Power MOSFETs. Features Typical RDS(on) = 0.050 Ω Avalanche rugged technology 100% Avalanche tested Repetitive avalanche data at 100oc Low gate charge High current capability 175oC Operating temperature Application oriented characterization APPLICATIONS High current, high speed switching Solenoid and relay drivers DC-DC& DC-AC converter Automotive environment (injection,abs, air-bag, lamp drivers etc.)
