Description of P Channel MOSFET 60V 27A This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Specification: Drain-source voltage (VGS = 0) 60 V Gate-source voltage ± 25 V Drain current (continuous) at TC = 25°C 27A Drain current (continuous) at TC = 100°C 19.1 A Total dissipation at TC = 25°C 120 W Document: Click Here Link
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